ty rf switching diode BA592/ba892... for band switching in tv/vtr tuners and mobile applications very low forward resistance (typ. 0.45 @ 3 ma) small capacitance BA592 ba892/-02l ba892-02v type package configuration l s (nh) marking BA592 ba892 ba892-02l ba892-02v sod323 scd80 tslp-2-1 sc79 single single single, leadless single 1.8 0.6 0.4 0.6 blue s aa aa a maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 35 v forward current i f 100 ma junction temperature t j 150 c operating temperature range t op -55 ... 125 storage temperature t st g -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) BA592 ba892, ba892-02v ba892-02l r thjs 135 120 70 k/w 1 for calculation of r thja please refer to application note thermal resistance product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 20 v i r - - 20 na forward voltage i f = 100 ma v f - - 1 v ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 0 v, f = 100 mhz c t 0.65 0.6 - 0.92 0.85 1 1.4 1.1 - pf reverse parallel resistance v r = 0 v, f = 100 mhz r p - 100 - k forward resistance i f = 3 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - 0.45 0.36 0.7 0.5 charge carrier life time i f = 10 ma, i r = 6 ma, measured at i r = 3ma, r l = 100 rr - 120 - ns i-region width w i - 3 - m insertion loss 1) i f = 0.1 ma, f = 1 ghz i f = 3 ma, f = 1 ghz i f = 10 ma, f = 1 ghz | s 21 | 2 - - - -0.1 -0.05 -0.04 - - - db isolation 1) v r = 0 v, f = 100 mhz v r = 0 v, f = 470 mhz v r = 0 v, f = 1 ghz | s 21 | 2 - - - -23.5 -10.5 -5.5 - - - 1 ba892-02l in series configuration, z = 50 BA592/ba892... product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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